AT266217B - Halbleiteranordnung mit mindestens zwei Zonen unterschiedlicher Beschaffenheit - Google Patents

Halbleiteranordnung mit mindestens zwei Zonen unterschiedlicher Beschaffenheit

Info

Publication number
AT266217B
AT266217B AT413266A AT413266A AT266217B AT 266217 B AT266217 B AT 266217B AT 413266 A AT413266 A AT 413266A AT 413266 A AT413266 A AT 413266A AT 266217 B AT266217 B AT 266217B
Authority
AT
Austria
Prior art keywords
zones
different properties
semiconductor arrangement
semiconductor
arrangement
Prior art date
Application number
AT413266A
Other languages
German (de)
English (en)
Original Assignee
Siemens Ag
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens Ag filed Critical Siemens Ag
Application granted granted Critical
Publication of AT266217B publication Critical patent/AT266217B/de

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/82—Heterojunctions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/24—Alloying of impurity materials, e.g. doping materials, electrode materials, with a semiconductor body
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D10/00—Bipolar junction transistors [BJT]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00—Subject matter not provided for in other groups of this subclass

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Bipolar Transistors (AREA)
AT413266A 1965-05-03 1966-05-02 Halbleiteranordnung mit mindestens zwei Zonen unterschiedlicher Beschaffenheit AT266217B (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DES0096890 1965-05-03

Publications (1)

Publication Number Publication Date
AT266217B true AT266217B (de) 1968-11-11

Family

ID=7520359

Family Applications (1)

Application Number Title Priority Date Filing Date
AT413266A AT266217B (de) 1965-05-03 1966-05-02 Halbleiteranordnung mit mindestens zwei Zonen unterschiedlicher Beschaffenheit

Country Status (6)

Country Link
AT (1) AT266217B (en])
CH (1) CH468717A (en])
DE (1) DE1514457A1 (en])
GB (1) GB1144147A (en])
NL (1) NL6605020A (en])
SE (1) SE323148B (en])

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5032538A (en) * 1979-08-10 1991-07-16 Massachusetts Institute Of Technology Semiconductor embedded layer technology utilizing selective epitaxial growth methods
US4378629A (en) 1979-08-10 1983-04-05 Massachusetts Institute Of Technology Semiconductor embedded layer technology including permeable base transistor, fabrication method
US5298787A (en) * 1979-08-10 1994-03-29 Massachusetts Institute Of Technology Semiconductor embedded layer technology including permeable base transistor

Also Published As

Publication number Publication date
DE1514457A1 (de) 1969-10-16
NL6605020A (en]) 1966-11-04
SE323148B (en]) 1970-04-27
GB1144147A (en) 1969-03-05
CH468717A (de) 1969-02-15

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